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Ayayi A
@dr_ahyi
Associate Research Professor
Vereinigte Staaten
Französisch, Englisch
Über mich
I am an Associate Research Professor with extensive experience in Electrical Engineering and Physics. My expertise includes SiC fabrication, semiconductor device characterization, and high-temperature electronics. I have successfully secured multiple research grants from NASA, NSF, and the Army Research Lab, and I hold several patents in semiconductor technology.
Kompetenzen
Ayayi A
offline •
Meine Dienstleistungen
Überarbeitung für akademische Texte
I will edit and proofread your phd thesis in ee and physics
Arbeitserfahrung
Auburn University
Vollzeit • 22 yrs 9 mos
Associate Research Professor
Jan 2014 - Dec 2023 • 9 yrs 11 mos
Served as an Associate Research Professor focusing on electrical engineering research. Responsibilities included leading research grants such as NASA EPSCoR and SBIR projects involving Silicon Carbide (SiC) fabrication, high-temperature electronics, and UV CMOS needs. Managed multi-disciplinary teams and collaborated with industry partners like Texas Instruments and CoolCad Inc. to develop next-generation power MOSFETs and integrated circuits.
Assistant Research Professor
Jan 2007 - Dec 2013 • 6 yrs 11 mos
Conducted advanced research in wide bandgap semiconductors. Key projects included the in situ characterization of JFET devices under proton irradiation for SemiSouth Inc. and noise reduction studies for Michelin Uniroyal. Contributed to the development of high-temperature integrated circuits and gate dielectric processes. Also engaged in teaching introductory physics classes and mentoring graduate students.
Post Doctoral Research Fellow
Jan 2002 - Dec 2007 • 5 yrs 11 mos
Performed post-doctoral research focused on semiconductor devices and acoustic radiation. Worked on the development of ultrasonic systems to monitor chiropractic treatment effects and conducted modal analysis for brake noise reduction in collaboration with Haldex Brakes Company. Published research on circumferential-wave phase velocities and proton radiation effects in SiC diodes.
